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Integrated Circuits W9825G6KH-6 SDRAM Memory IC Of Winbond Brand

Integrated Circuits W9825G6KH-6 SDRAM Memory IC Of Winbond Brand

W9825G6KH-6 SDRAM Memory IC 256Mb (16M x 16) Parallel 166MHz 5ns 54-TSOP

Product details

W9825G6KH-6 SDRAM Memory IC 256Mb (16M x 16) Parallel 166MHz 5ns 54-TSOP

All integrated circuit and electronic component from the largest independent distributor of China    

Contact person : Apple Lin

Skype : mikehkasco   

Mobile phone / hatsapp:008615876852151
E-mail:mike at hkasco.com 

 

Product Description

General Description 

W9825G6DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology, W9825G6DH delivers a data bandwidth of up to 166M words per second (-6). To fully comply with the personal computer industrial standard, W9825G6DH is sorted into the following speed grades: -6/-6C/- 6I and -75/75I. The - 6 is compliant to the 166MHz/CL3 or 133MHz/CL2 specification. The – 6C is compliant to the 166MHz/CL3 specification. The -6I is compliant to the 166MHz/CL3 specification (the -6I grade which is guaranteed to support -40°C ~ 85°C). The -75/75I is compliant to the 133MHz/CL3 specification (the 75I grade which is guaranteed to support -40°C ~ 85°C). Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9825G6DH is ideal for main memory in high performance applications.

 

Applications

 

Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM
Memory Size256Mb (16M x 16)
Clock Frequency166MHz
Access Time5ns
Memory InterfaceParallel
Voltage - Supply3 V ~ 3.6 V
Operating Temperature0°C ~ 70°C (TA)
Mounting TypeSurface Mount
Package / Case54-TSOP (0.400", 10.16mm Width)
Supplier Device Package54-TSOP II

Ordering Information

 Integrated Circuits W9825G6KH-6 SDRAM Memory ICIntegrated Circuits W9825G6KH-6 SDRAM Memory ICIntegrated Circuits W9825G6KH-6 SDRAM Memory IC

Certifications


 

Packing & Delivery


 

 

1.We will arrange the shipment within 3 working days after the payment reached.


2.We can ship Via your shipping account ( DHL / FedEx / UPS / TNT ), Or ship via our side .


3.We are not responsible for any accidents, delays or other issues that are the responsibility of the shipping service.

 

Warranty


Refund & Replacement


1.We provide 30-60 days warranty.

2.If the item you purchase from our store are not of perfected quality, that is they don't work electronically to manufacturers specifications, simply return them to us for replacement or refund.

3.If the items is defective, pls notify us within 3 days of delivery.

4.Any items must be returned in their original condition to qualify for a refund or replacement.

5.The buyer is responsible for all the shipping cost incurre 

 

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FAQ


 

1. Q: What is your products quality ?

A: We offer all parts are new and original .

2. Q:What is your lead time?

A: 1-2 days. we have own warehouse and stock in large quantity.

3. Q: What is the shipping port?

A: We ship the goods via Port of HONGKONG or Shenzhen

4. Q: What is your payment terms?

A: T/T, Paypal, Western union,  L/C ,ESROW 

5.Q: What’s your advantage?

A: Competitive price & Good quality control & Fast production and delivery & Low MOQ & Professional sales and good after-sale service

 

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ASCO Technology Co.,Limited
Tel: +86-755-89678886
Mob:+86-13590407046
Address: RM4311 , 43/F , SEG Plaza , Huaqiang North RD , Futian District , SZ ,GD , CN 518000
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